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| SMD Type Power Transistor 2SD1782K SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 High VCEO, VCEO=80V. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Low VCE(sat).VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 80 80 5 0.5 0.2 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=50iA IC=2mA IE=50iA VCB=50V VEB=4V 0.2 120 120 7.5 Testconditons Min 80 80 5 0.5 0.5 0.5 390 MHz pF Typ Max Unit V V V iA iA V VCE(sat) IC/IB=500mA/50mA hFE fT Cob VCE=3V, IC=100mA VCE=10V, IE= -50mA, f=100MHz VCB=10V, IE=0, f=1MHz hFE Classification Marking Rank hFE Q 120 270 AJ R 180 390 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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